1 of 6 optimum technology matching? applied gaas hbt ingap hbt gaas mesfet sige bicmos si bicmos sige hbt gaas phemt si cmos si bjt gan hemt functional block diagram rf micro devices?, rfmd?, optimum technology matching?, enabling wireless connectivity?, powerstar?, polaris? total radio? and ultimateblue? are trademarks of rfmd, llc. bluetooth is a trade- mark owned by bluetooth sig, inc., u.s.a. and licensed for use by rfmd. all other trade names, trademarks and registered tradem arks are the property of their respective owners. ?2006, rf micro devices, inc. product description 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or sales-support@rfmd.com . ordering information rf mems ldmos vbat rf out rf in vmode1 ven vmode0 vcc cpl in cpl out gnd 5 4 1 2 3 6 7 10 9 8 amp bias control & pa/v mode enable RF7228 3v w-cdma band 8 linear pa module the RF7228 is a high-power, high-efficiency, linear power amplifier designed for use as the final rf amplifier in 3v, 50 ? w-cdma mobile cel- lular equipment and spread-spectrum systems. this pa is developed for umts band 8 which operates in the 880mhz to 915mhz frequency band. the RF7228 has two digital control pins to select one of three power modes to optimize performance and current drain at lower power levels. the part also has an integrated directional coupler which eliminates the need for an external discrete coupler at the output. the RF7228 is fully hsdpa and hspa+ compliant and is assembled in a 10-pin, 3mmx3mm module. features ? hsdpa and hspa+ compliant ? low voltage positive bias supply (3.0v to 4.35v) ? +28.5dbm linear output power (+27.0dbm hsdpa) ? high efficiency operation 41 % at p out =+28.5dbm 22% at p out =+18.0dbm 11 % at p out =+10.0dbm ? low quiescent current in low power mode: 6 ma ? internal voltage regulator eliminates the need for exter- nal reference voltage (v ref ) ? 3-mode power states with digital control interface ? integrated power coupler ? integrated blocking and col- lector decoupling capacitors applications ? wcdma/hsdpa/hsupa wire- less handsets and data cards ? dual-mode umts wireless handsets RF7228 3v w-cdma band 8 linear pa module RF7228pcba-410 fully assembled evaluation board prelim ds110224 ? package style: module, 10-pin, 3mmx3mmx1.0mm
2 of 6 RF7228 prelim ds110224 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or sales-support@rfmd.com . absolute maximum ratings parameter rating unit supply voltage in standby mode 6.0 v supply voltage in idle mode 6.0 v supply voltage in operating mode, 50 ? load 6.0 v supply voltage, v bat 6.0 v control voltage, vmode0, vmode1 3.5 v control voltage, v en 3.5 v rf - input power +10 dbm rf - output power +30 dbm output load vswr (ruggedness) 10:1 operating ambient temperature -30 to +110 c storage temperature -55 to +150 c parameter specification unit condition min. typ. max. recommended operating conditions operating frequency range 880 915 mhz v bat +3.0 +3.4 +4.35 v v cc +3.0 1 +3.4 +4.35 v v en 0 0.5 v pa disabled. 1.4 1.8 3.0 v pa enabled. v mode0 , v mode1 0 0.5 v logic ?low?. 1.5 1.8 3.0 v logic ?high?. p out maximum linear output (hpm) 28.5 2,3 dbm high power mode (hpm) maximum linear output (mpm) 18.0 2,3 dbm medium power mode (mpm) maximum linear output (lpm) 10.0 2,3 dbm low power mode (lpm) ambient temperature -30 +25 +85 c notes: 1 minimum v cc for max p out is indicated. 2 for operation at v cc =+3.2v, derate p out by 0.6db. for operation at v cc =3.0v, derate p out by 1.3db. 3 p out is specified for 3gpp (rel99) modulation. for hsdpa and hspa+ operation, derate p out by 1.5db: hsdpa configuration: ? c ? 12, ? d ? 15, ? hs ? 24 hspa+ configuration: rel7 subtest 1 caution! esd sensitive device. exceeding any one or a combination of the absolute maximum rating conditions may cause permanent damage to the device. extended application of absolute maximum rating conditions to the device may reduce device reliability. specified typical perfor- mance or functional operation of the device under absolute maximum rating condi- tions is not implied. rohs status based on eudirective2002/95/ec (at time of this document revision). the information in this publication is believed to be accurate and reliable. however, no responsibility is assumed by rf micro device s, inc. ("rfmd") for its use, nor for any infringement of patents, or other rights of third parties, resulting from its use. no license is granted by implication or otherwise under any patent or patent rights of rfmd. rfmd reserves the right to change component circuitry, recommended appli- cation circuitry and specifications at any time without prior notice.
3 of 6 RF7228 prelim ds110224 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or sales-support@rfmd.com . parameter specification unit condition min. typ. max. electrical specifications t=+25 ? c, v cc =v bat =+3.4v, v en =+1.8v, 50 ? system, w-cdma rel 99 modulation unless otherwise specified. gain 27 30 db hpm, p out =28.5dbm 16 18 db mpm, p out ? 18.0dbm 10 13 db lpm, p out ? 10.0dbm gain linearity 0.7 db hpm, 18.0dbm ? p out ? 28.5dbm aclr - 5mhz offset -40 dbc hpm, p out =28.5dbm -40 dbc mpm, p out =18.0dbm -40 dbc lpm, p out =10.0dbm aclr - 10mhz offset -52 dbc hpm, p out =28.5dbm -60 dbc mpm, p out =18.0dbm -60 dbc lpm, p out =10.0dbm pae 41 % hpm, p out =28.5dbm 22 % mpm, p out =18.0dbm 11 % p out =11.0dbm current drain 500 ma hpm, p out =28.5dbm 85 ma mpm, p out =18dbm 30 ma lpm, p out =10dbm quiescent current 85 ma hpm, dc only 20 ma mpm, dc only 6 ma lpm, dc only enable current 0.1 ma source or sink current. v en =1.8v. mode current (i mode0 , i mode1 ) 0.1 ma source or sink current. v mode0 , v mode1 =1.8v. leakage current 5.0 15.0 ? a dc only. v cc =v bat =4.35v, v en =v mode0 =v mode1 =0.5v. noise power in receive band -135 dbm/hz all power modes, measured at duplex offset frequency (ftx+45mhz). rx: 925mhz to 960mhz, p out ? 28.5dbm input impedance 1.5:1 vswr no ext. matching, p out ? 28.5dbm, all modes. harmonic, 2fo -15 dbm p out ? 28.5dbm, all power modes. harmonic, 3fo -25 dbm p out ? 28.5dbm, all power modes. spurious output level -70 dbc all spurious, p out ? 28.5dbm, all conditions, load vswr ? 6:1, all phase angles. insertion phase shift 25 phase shift at 18dbm when switching from hpm to mpm and mpm to lpm at 10dbm. dc enable time 10 ? s dc only. time from v en =high to stable idle cur- rent (90% of steady state value). rf rise/fall time 6 ? sp out ? 28.5dbm, all modes. 90% of target, dc settled prior to rf. coupling factor -20 db p out ? 28.5dbm, all modes. coupling accuracy - temp/voltage 0.5 db p out ? 28.5dbm, all modes. -30c ? t ? 85c, 3.0v ? v cc & v bat ? 4.35v, referenced to 25c, 3.4v conditions. coupling accuracy - vswr 0.25 db p out ? 28.5dbm, all modes, load vswr=2:1, 0.25db accuracy corresponds to 20db direc- tivity.
4 of 6 RF7228 prelim ds110224 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or sales-support@rfmd.com . package drawing pin function description 1vbat supply voltage for bias circuitry. 2rf in rf input internally matched to 50 ? and dc blocked. input matching includes a shunt inductor to ground which would short dc voltage placed on this pin. 3vmode1 digital control input for power mode sele ction (see operating modes truth table). 4vmode0 digital control input for power mode sele ction (see operating modes truth table). 5ven digital control input for pa enable and disable (see operating modes truth table). 6 cpl_out coupler output. 7gnd this pin must be grounded. 8 cpl_in coupler input used for cascad ing couplers in series. terminate this pin with a 50 ? resistor if not connected to another coupler. 9rf out rf output internally matched to 50 ?? and dc blocked. 10 vcc supply voltage for the first and second stage amplifier. pkg base gnd ground connection. the package backside should be soldered to a topside ground pad connecting to the pcb ground plane with multiple ground vias. the pad should have a low thermal resistance and low electrical imped- ance to the ground plane. v en v mode0 v mode1 v bat v cc conditions/comments low low low 3.0v to 4.35v 3.0v to 4.35v power down mode low x x 3.0v to 4.35v 3.0v to 4.35v standby mode high low low 3.0v to 4.35v 3.0v to 4.35v high power mode high high low 3.0v to 4.35v 3.0v to 4.35v medium power mode high high high 3.0v to 4.35v 3.0v to 4.35v low power mode
5 of 6 RF7228 prelim ds110224 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or sales-support@rfmd.com . preliminary application schematic pcb design requirements pcb surface finish the pcb surface finish used for rfmd's qualification process is electroless nickel, immersion gold. typical thickness is 3 ? inch to 8 ? inch gold over 180 ? inch nickel. pcb land pattern recommendation pcb land patterns for rfmd components are based on ipc-7351 standards and rfmd empirical data. the pad pattern shown has been developed and tested for optimized assembly at rf md. the pcb land pattern has been developed to accommodate lead and package tolerances. since surface mount processes va ry from company to company, careful process development is recommended. pcb metal land pattern pcb metal land pattern (top view)
6 of 6 RF7228 prelim ds110224 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or sales-support@rfmd.com . pcb solder mask pattern liquid photo-imageable (lpi) solder mask is recommended. the solder mask footprint will match what is shown for the pcb metal land pattern with a 2mil to 3mil expansion to accommod ate solder mask registration clearance around all pads. the center-grounding pad shall also have a solder mask clearance. expansion of the pads to create solder mask clearance can be provided in the master data or requ ested from the pcb fabrication supplier. thermal pad and via design the pcb land pattern has been designed with a thermal pad th at matches the die paddle size on the bottom of the device. thermal vias are required in the pcb layout to effectively conduct heat away from the package. the via pattern has been designed to address thermal, power dissipation and electrical requirements of the device as well as accommodating routing strategies. the via pattern used for the rfmd qualification is based on thru-hole vias with 0.203mm to 0.330mm finished hole size on a 0.5mm to 1.2mm grid pattern with 0.025mm plating on via walls. if micro vias are used in a design, it is suggested that the quantity of vias be increased by a 4:1 ratio to achieve similar results. pcb solder mask pattern (top view)
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